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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Alay, Josep Lluís |
dc.contributor.author | Hirose, M. |
dc.date | 2012-10-08T13:06:35Z |
dc.date | 2012-10-08T13:06:35Z |
dc.date | 1997 |
dc.date | 2012-10-08T13:06:35Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 567525 |
dc.identifier.uri | http://hdl.handle.net/2445/32224 |
dc.format | 3 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363895 |
dc.relation | Journal of Applied Physics, 1997, vol. 81, num. 3, p. 1606-1608 |
dc.relation | http://dx.doi.org/10.1063/1.363895 |
dc.rights | (c) American Institute of Physics , 1997 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Semiconductors |
dc.subject | Interfícies (Ciències físiques) |
dc.subject | Semiconductors |
dc.subject | Interfaces (Physical sciences) |
dc.title | The valence band alignment at ultrathin SiO2/Si interfaces |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |