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Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
Temple Boyer, Pierre; Jalabert, L.; Masarotto, L.; Alay, Josep Lluís; Morante i Lleonart, Joan Ramon
Universitat de Barcelona
2012-05-08
Pel·lícules fines
Electroquímica
Nitrurs
Microelectrònica
Thin films
Electrochemistry
Nitrides
Microelectronics
(c) American Institute of Physics 2000
Article
American Institute of Physics
         

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