X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs

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dc.contributor	Universitat de Barcelona
dc.contributor.author	Alay, Josep Lluís
dc.contributor.author	Vandervorst, Wilfried
dc.date	2012-05-08T07:09:09Z
dc.date	2012-05-08T07:09:09Z
dc.date	1992
dc.identifier.citation	0734-2101
dc.identifier.citation	109542
dc.identifier.uri	http://hdl.handle.net/2445/25043
dc.format	5 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: http://dx.doi.org/10.1116/1.577731
dc.relation	Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1992, vol. 10, p. 2926-2930
dc.relation	http://dx.doi.org/10.1116/1.577731
dc.rights	(c) American Institute of Physics, 1992
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Semiconductors
dc.subject	Microelectrònica
dc.subject	Química analítica
dc.subject	Espectroscòpia d'electrons
dc.subject	Semiconductors
dc.subject	Microelectronics
dc.subject	Analytical chemistry
dc.subject	Electron spectroscopy
dc.title	X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in situ x¿ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A strong energy and angular dependence for the oxidation of As relative to Ga is found. Low energies as well as near normal angles of incidence favor the oxidation of As. The difference between Ga and As can be explained in terms of the formation enthalpy for the oxide and the excess supply of oxygen. In an AlGaAs target the Al is very quickly completely oxidized irrespective of the experimental conditions. The steady state composition of the altered layers show in all cases a preferential removal of As.

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