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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Barquinha, Pedro M. C. |
dc.contributor.author | Vilà i Arbonès, Anna Maria |
dc.contributor.author | Gonçalves, Gonçalo |
dc.contributor.author | Pereira, Luís M. N. |
dc.contributor.author | Martins, Rodrigo F. P. |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.contributor.author | Fortunato, Elvira M. C. |
dc.date | 2009-06-19T08:17:11Z |
dc.date | 2009-06-19T08:17:11Z |
dc.date | 2008 |
dc.identifier.citation | 0018-9383 |
dc.identifier.citation | 560039 |
dc.identifier.uri | http://hdl.handle.net/2445/8760 |
dc.format | 7 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | IEEE |
dc.relation | Reproducció del document publicat a http://dx.doi.org/10.1109/TED.2008.916717 |
dc.relation | IEEE Transactions on Electron Devices, 2008, vol. 55, núm. 4, p. 954-960. |
dc.relation | http://dx.doi.org/10.1109/TED.2008.916717 |
dc.rights | (c) IEEE, 2008 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Espectrometria de masses |
dc.subject | Semiconductors amorfs |
dc.subject | Annealing |
dc.subject | Secondary ion mass spectroscopy |
dc.subject | Thin film transistors |
dc.subject | Time of flight |
dc.subject | Mass spectrometers |
dc.title | Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |