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Title:
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Insights to memristive memory cell from a reliability perspective
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Author:
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Pouyan, Peyman; Amat Bertran, Esteve; Rubio Sola, Jose Antonio
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
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Abstract:
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The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
-Memristors
-Durability
-Random access storage
-Reconfigurable hardware
-Reliability – RRAM
-crossbar
-Emerging device
-Memristor
-Process variability
-reconfiguration
-Ordinadors -- Memòries semiconductores |
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Rights:
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Document type:
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Article - Submitted version
Conference Object |
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Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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