To access the full text documents, please follow this link: http://hdl.handle.net/2117/85295
Title: | High efficiency interdigitated back-contact c-Si solar cells |
---|---|
Author: | Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió Díaz, David; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón |
Other authors: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract: | In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with front surface passivation using atomic layer deposited Al2O3 films on textured surfaces with random pyramids. Very low reflectance with outstanding surface recombination velocity values around 3 cm/s are achieved in our precursors. Fabricated solar cells reach efficiencies up to 20.3% (AM1.5G 1 kW/m2, T=25°C), with short circuit density Jsc, open circuit voltage Voc and fill factor FF of 40.6 mA/cm2, 648 mV and 77.2% respectively. |
Subject(s): | -Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Atomic layer deposition -back-contact -crystalline silicon -passivation -solar cells -Bateries solars -Cèl·lules solars |
Rights: | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
Document type: | Article - Published version Conference Object |
Published by: | Institute of Electrical and Electronics Engineers (IEEE) |
Share: |