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Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; López González, Juan Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
In this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped regions are defined in a point-like structure instead of the more classical arrangement of fully doped fingers. Numerical simulations allow us to optimize rear contact geometry, i.e. optimum pitch between contacts, depending on the substrate resistivity and the passivation quality of base contacts. Results show a trade-off between recombination and base resistive losses demonstrating limit efficiencies over 27% for a perfectly passivated structure on p- and n-type substrates. More realistic devices where state-of-the-art surface passivation is considered reach efficiencies beyond 22% on 2 +- 1 ohmcm substrates with optimum pitch values of 200 +- 50 µm.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal::Processament de la imatge i del senyal vídeo
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica
Solar cells
Three-dimensional imaging
IBC solar cell
C-Si
Point-like contacts
3D simulation
Electrical shading
Laser doping
Cèl·lules solars
Imatges tridimensionals
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
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