Título:
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Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%
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Autor/a:
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Calle Prado, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió, David; Masmitjà Rusiñol, Gerard; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to improve contact resistance and simultaneously reduce recombination current density. Fabricated devices reach efficiencies up to 22.2% (AM1.5G 1 kW/m2, T=25°C). This value is so far the highest efficiency reported by any Spanish institution using silicon substrates. 3D simulations envisage efficiencies beyond 24% introducing little changes in the fabrication process. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica -Solar cells -Interdigitated back-contacted solar cell -Crystalline silicon -ALD Al2O3 -Passivation -High efficiency -Cèl·lules solars |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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