Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition

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dc.contributor	Universitat de Barcelona
dc.contributor.author	Fonrodona Turon, Marta
dc.contributor.author	Soler i Vilamitjana, David
dc.contributor.author	Bertomeu i Balagueró, Joan
dc.contributor.author	Andreu i Batallé, Jordi
dc.date	2013-10-29T15:03:27Z
dc.date	2013-10-29T15:03:27Z
dc.date	2001
dc.date	2013-10-29T15:03:28Z
dc.identifier.citation	0040-6090
dc.identifier.citation	171328
dc.identifier.uri	http://hdl.handle.net/2445/47379
dc.format	17 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	Elsevier B.V.
dc.relation	Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(01)01230-5
dc.relation	Thin Solid Films, 2001, vol. 395, num. 1-2, p. 125-129
dc.relation	http://dx.doi.org/10.1016/S0040-6090(01)01230-5
dc.rights	(c) Elsevier B.V., 2001
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Catàlisi
dc.subject	Deposició química en fase vapor
dc.subject	Silici
dc.subject	Nanocristalls
dc.subject	Catalysis
dc.subject	Chemical vapor deposition
dc.subject	Silicon
dc.subject	Nanocrystals
dc.title	Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/acceptedVersion
dc.description.abstract	Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, both for n and p doping, and electrical characteristics similar to those of plasma-deposited films. The doping efficiency of n-type amorphous silicon is similar to that obtained for plasma-deposited electronic-grade amorphous silicon, whereas p-type layers show a doping efficiency of one order of magnitude lower. A higher deposition temperature of 450°C was required to achieve p-type films with electrical characteristics similar to those of plasma-deposited films.

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