Title:
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Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
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Author:
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Soler i Vilamitjana, David; Fonrodona Turon, Marta; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
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Other authors:
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Universitat de Barcelona |
Abstract:
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In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%). |
Subject(s):
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-Silici -Pel·lícules fines -Nanocristalls -Deposició en fase de vapor -Cèl·lules solars -Silicon -Thin films -Nanocrystals -Vapor-plating -Solar cells |
Rights:
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(c) Elsevier B.V., 2001
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Document type:
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Article Article - Accepted version |
Published by:
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Elsevier B.V.
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