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Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD
Soler i Vilamitjana, David; Fonrodona Turon, Marta; Voz Sánchez, Cristóbal; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
Universitat de Barcelona
We present structural and electrical properties for p- and n-type layers grown close to the transition between a-Si:H and nc-Si:H onto different substrates: Corning 1737 glass, ZnO:Al-coated glass and stainless steel. Structural properties were observed to depend on the substrate properties for samples grown under the same deposition conditions. Different behaviour was observed for n- and p-type material. Stainless steel seemed to enhance crystallinity when dealing with n-type layers, whereas an increased crystalline fraction was obtained on glass for p-type samples. Electrical conduction in the direction perpendicular to the substrate seemed to be mainly determined by the interfaces or by the existence of an amorphous incubation layer that might determine the electrical behaviour. In the direction perpendicular to the substrate, n-type layers exhibited a lower resistance value than p-type ones, showing better contact properties between the layer and the substrate.
29-10-2013
Deposició química en fase vapor
Catàlisi
Silici
Nanocristalls
Cèl·lules solars
Pel·lícules fines
Propietats elèctriques
Chemical vapor deposition
Catalysis
Silicon
Nanocrystals
Solar cells
Thin films
Electric properties
(c) Elsevier B.V., 2003
Artículo
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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