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Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C
Muñoz Ramos, David; Voz Sánchez, Cristóbal; Martin, I.; Orpella, A.; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Damon-Lacoste, J.; Roca i Cabarrocas, P. (Pere)
Universitat de Barcelona
In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.
Deposició química en fase vapor
Cèl·lules solars
Teoria quàntica
Microelectrònica
Chemical vapor deposition
Solar cells
Quantum theory
Microelectronics
(c) Elsevier B.V., 2008
Artículo
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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