A comparative variability analysis for CMOS and CNFET 6T SRAM cells

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Title:	A comparative variability analysis for CMOS and CNFET 6T SRAM cells
Author:	García Almudéver, Carmen; Rubio Sola, Jose Antonio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -CMOS -MOSFET -CNFET -SRAM chips -Carbon nanotubes -Nanotubs de carboni
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Document type:	Article - Published version Conference Object
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