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Alloy inhomogeneities in InAlAs strained layers grown by MBE

Author

Peiró Martínez, Francisca

Cornet i Calveras, Albert

Morante i Lleonart, Joan Ramon

Clark, S. A.

Williams, R. H.

Publication date

2012-10-08T12:08:11Z

2012-10-08T12:08:11Z

1992

2012-10-08T12:08:11Z

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Abstract

Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.

Document Type

Article

Published version

Language

English

Subjects and keywords

Microscòpia electrònica; Pel·lícules fines; Feixos moleculars; Electron microscopy; Thin films; Molecular beams

Publisher

American Institute of Physics

Related items

Reproducció del document publicat a: http://dx.doi.org/10.1063/1.351083

Journal of Applied Physics, 1992, vol. 71, num. 5, p. 2470-2472

http://dx.doi.org/10.1063/1.351083

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Rights

(c) American Institute of Physics , 1992

This item appears in the following Collection(s)

Enginyeria Electrònica i Biomèdica [781]

ISGlobal - Institut de Salut Global de Barcelona [60808]