dc.contributor.author
Peiró Martínez, Francisca
dc.contributor.author
Cornet i Calveras, Albert
dc.contributor.author
Morante i Lleonart, Joan Ramon
dc.contributor.author
Clark, S. A.
dc.contributor.author
Williams, R. H.
dc.date.issued
2012-10-08T12:08:11Z
dc.date.issued
2012-10-08T12:08:11Z
dc.date.issued
2012-10-08T12:08:11Z
dc.identifier
https://hdl.handle.net/2445/32219
dc.description.abstract
Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.351083
dc.relation
Journal of Applied Physics, 1992, vol. 71, num. 5, p. 2470-2472
dc.relation
http://dx.doi.org/10.1063/1.351083
dc.rights
(c) American Institute of Physics , 1992
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Microscòpia electrònica
dc.subject
Pel·lícules fines
dc.subject
Feixos moleculars
dc.subject
Electron microscopy
dc.subject
Molecular beams
dc.title
Alloy inhomogeneities in InAlAs strained layers grown by MBE
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
