Title:
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Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
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Author:
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Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V.
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics -Electronic circuits -Body Bias -FDSOI -Jitter -Ring Oscillators -RTN -Ultra-Low Voltage Jitter -Low power electronics -MOS devices -Oscillators (electronic) -Threshold voltage -Body bias -FDSOI -Fdsoi technologies -Oscillation frequency -Random telegraph noise -Ring oscillator -Threshold voltage variation -Ultra-low-voltage -Bias voltage -Circuits electrònics |
Rights:
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Document type:
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Article - Published version Conference Object |
Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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