Título:
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Aging in CMOS RF linear power amplifiers: experimental comparison and modeling
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Autor/a:
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Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance of the topology selection in order to guarantee robustness against aging effects, and thus the need to predict MOS parameter degradation during the design phase, accounting for the actual DC and RF operation conditions. For that purpose, we propose a semi-empirical compact model that, based on the RMS equivalent voltages at the transistor terminals during circuit operation, can provide an estimation of the aging degradation. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència -Power amplifiers -Aging -Reliability -RF -Power amplifier -Amplificadors de potència |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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Compartir:
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