Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

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Títol:	Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric
Autor/a:	Crespo-Yepes, Albert; Martin Martinez, Javier; Rothschild, A.; Rodríguez Martínez, Rosana; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier
Abstract:	The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD, the polarity of the BD-recovery stresses and the number of stress cycles are analyzed.
Matèries:	-Dielectric breakdown (BD) -BD reversibility -High-k -Reliability -Resistive switching -CMOS
Drets:	open access Tots els drets reservats. https://rightsstatements.org/vocab/InC/1.0/
Tipus de document:	Article
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Uri:	https://ddd.uab.cat/record/138450

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