Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

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Título:	Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
Autor/a:	Crespo-Yepes, Albert; Martin Martinez, Javier; Rothschild, A.; Rodríguez Martínez, Rosana; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier
Abstract:	The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be 'opened' and 'closed' many times and that the BD recovery partially restores not only the current through the gate, but also the MOSFET channel related electrical characteristics.
Materia(s):	-MOSFET -Hafnium -High-k dielectric thin films -Semiconductor device breakdown -Switching circuits
Derechos:	open access Tots els drets reservats. https://rightsstatements.org/vocab/InC/1.0/
Tipo de documento:	Article
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Uri:	https://ddd.uab.cat/record/138449

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