Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

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RECERCAT Home > Universitat Autònoma de Barcelona > Articles escrits per personal UAB o publicats per la universitat > View document

dc.contributor.author	Maestro, M.
dc.contributor.author	Martín Martínez, Javier
dc.contributor.author	Díaz Fortuny, Javier
dc.contributor.author	Crespo-Yepes, Albert
dc.contributor.author	Gonzalez, M. B.
dc.contributor.author	Rodríguez Martínez, Rosana
dc.contributor.author	Campabadal Segura, Francesca
dc.contributor.author	Nafría i Maqueda, Montserrat
dc.contributor.author	Aymerich Humet, Xavier
dc.date	2015
dc.identifier	https://ddd.uab.cat/record/133466
dc.identifier	10.1016/j.mee.2015.04.057
dc.identifier	oai:ddd.uab.cat:133466
dc.identifier	ARE-79521
dc.identifier	01679317v147p176
dc.identifier	84928944491
dc.identifier	000362308000043
dc.identifier	oai:egreta.uab.cat:publications/98981860-373a-4d63-82cd-597f4e3f4b6b
dc.format	application/pdf
dc.language	eng
dc.publisher
dc.relation	Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R
dc.relation	info:eu-repo/grantAgreement/ERDF/TEC2013-45638-C3-1-R
dc.relation	Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384
dc.relation	Microelectronic engineering ; Vol. 147 (Nov. 2015), p. 176-179
dc.rights	open access
dc.rights	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
dc.rights	https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject	Resistive switching random access memory (RRAM)
dc.subject	Metal-insulator-semiconductor (MIS)
dc.subject	Fast ramped voltages
dc.subject	Time domain measurements
dc.title	Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
dc.type	Article
dc.description.abstract	The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain.Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions

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