Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

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Title:	Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
Author:	Maestro, M.; Martín Martínez, Javier; Díaz Fortuny, Javier; Crespo-Yepes, Albert; Gonzalez, M. B.; Rodríguez Martínez, Rosana; Campabadal Segura, Francesca; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier
Abstract:	The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain.Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions
Subject(s):	-Resistive switching random access memory (RRAM) -Metal-insulator-semiconductor (MIS) -Fast ramped voltages -Time domain measurements
Rights:	open access Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. https://creativecommons.org/licenses/by-nc-nd/3.0/
Document type:	Article
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Uri:	https://ddd.uab.cat/record/133466