Título:
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TCO-free low-temperature p+ emitters for back-junction c-Si solar cells
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Autor/a:
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Martín García, Isidro; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Desrues, Thibaut; Orpella García, Alberto; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the rear side of the cell and it consists of point-like laser-diffused p+ regions with a surface charge induced emitter in between based on the high negative charge located at the Al2O3/c-Si interface. These emitters are fabricated at low temperature (< 400 °C) and could be directly compared to silicon heterojunction emitters with the advantage that the deposition of a Transparent Conductive Oxide (TCO) film can be avoided, since they are based on p+/n c-Si homojunctions. Additionally, the involved films are transparent to the IR photons ( >1000 nm) that reach the rear surface of the cell resulting in an excellent back reflector. We fabricated solar cells with distance between p+ regions or pitch ranging from 200 to 350 µm with a front surface based on silicon heterojunction technology. Best efficiency (18.1%) is obtained for a pitch of 250 µm as a consequence of the trade-off between Voc and FF values. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -DopLa cell -Laser doping -Back-junction -c-Si solar cells -Cèl·lules solars |
Derechos:
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Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
Tipo de documento:
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Artículo - Versión publicada Artículo |
Editor:
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Elsevier
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