Título:
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P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks
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Autor/a:
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Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Institut de Recerca en Energía de Catalunya; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this work, we further investigate a new strategy to passivate and contact the rear side of p-type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous silicon carbide (SiCx) stacks before rear metallization. For this stack, surface passivation of outstanding quality is obtained with effective surface recombination velocities in the 1 cm/s range on <100> FZ 2.3 O cm p-type substrates. The dielectric stack is processed with a 1064 nm laser defining square matrixes of spots where the dielectric film is opened. Simultaneously, part of the aluminum contained in the Al2O3 film is locally introduced into the c-Si, creating a p+ region. The presence of a SiCx capping layer onto the Al2O3 helps in the formation of this local back surface field reducing surface recombination velocity at the contacts to ~2×103 cm/s. This new technique is applied to 2×2 cm2 solar cells leading to photovoltaic conversion efficiencies well beyond 20% on 0.5 and 2.3 O cm substrates. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Aluminum oxide -Back surface field -Laser-fired contacts -Silicon carbide -Silicon solar cells -Surface passivation -Cèl·lules solars |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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