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Título:	Microcrystalline silicon thin film transistors obtained by hot-wire CVD
Autor/a:	Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.
Abstract:	Peer Reviewed
Materia(s):	-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica -Thin films -Microcrystalline silicon -Hot-wire CVD -Thin film transistors -Capes fines
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Tipo de documento:	Artículo - Versión publicada Artículo
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