Title:
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Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C
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Author:
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Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV–visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 O·cm) FZ silicon wafers. Finally, 1 cm2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 O·cm) CZ silicon wafers with aluminum back-surface-field contact. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Silicon -Hot-wire deposition -Solar cell -Heterostructure -Cèl·lules solars -Silici |
Rights:
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Document type:
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Article - Published version Article |
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