Amplificadores multietapa de bajo en las bandas de 20 y 30ghz

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/87111

dc.contributor	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.contributor	Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.contributor.author	Artal, E
dc.contributor.author	Corbella Sanahuja, Ignasi
dc.contributor.author	Busquets, C
dc.contributor.author	Pradell i Cara, Lluís
dc.date	1989
dc.identifier.citation	Artal, E., Corbella, I., Busquets, C., Pradell, L. Amplificadores multietapa de bajo en las bandas de 20 y 30ghz. A: Simposium Nacional de la Unión Científica Internacional de Radio. "IV simposium nacional de Unión Científica Internacional de Radio: libro de actas: Santander, 25-27 de septiembre de 1989". Santander: 1989, p. 231-235.
dc.identifier.uri	http://hdl.handle.net/2117/87111
dc.language.iso	spa
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject	Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica
dc.subject	Transistors
dc.subject	Transistors
dc.title	Amplificadores multietapa de bajo en las bandas de 20 y 30ghz
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	Microstrip coupled lines technology has been used to design and built low noise amplifiers in 20 and 30 GHz bands. Active devices are GaAs MESFET and HEMT in chip form. The amplifiers have input and output waveguide interfaces, probe transitions between microstrip line and rectangular waveguide are described. Two three-stage low noise amplifiers, at 20 and 30 GHz respectively, are presented.
dc.description.abstract	Peer Reviewed

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