Shot-noise suppression in Schottky barrier diodes

Publication date

2012-05-03T10:07:36Z

2012-05-03T10:07:36Z

2000-09-01

Abstract

We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.

Document Type

Article


Published version

Language

English

Publisher

American Institute of Physics

Related items

Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1288219

Journal of Applied Physics, 2000, vol. 88, p. 3079-3081

http://dx.doi.org/10.1063/1.1288219

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(c) American Institute of Physics, 2000

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