Shot-noise suppression in Schottky barrier diodes

dc.contributor.author
Gomila Lluch, Gabriel
dc.contributor.author
Reggiani, L. (Lino), 1941-
dc.contributor.author
Rubí Capaceti, José Miguel
dc.date.issued
2012-05-03T10:07:36Z
dc.date.issued
2012-05-03T10:07:36Z
dc.date.issued
2000-09-01
dc.identifier
0021-8979
dc.identifier
https://hdl.handle.net/2445/24825
dc.identifier
526801
dc.description.abstract
We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.
dc.format
3 p.
dc.format
application/pdf
dc.language
eng
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1288219
dc.relation
Journal of Applied Physics, 2000, vol. 88, p. 3079-3081
dc.relation
http://dx.doi.org/10.1063/1.1288219
dc.rights
(c) American Institute of Physics, 2000
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Microelectrònica
dc.subject
Matèria condensada
dc.subject
Microelectronics
dc.subject
Condensed matter
dc.title
Shot-noise suppression in Schottky barrier diodes
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion


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