dc.contributor.author
Roura Grabulosa, Pere
dc.contributor.author
Morante i Lleonart, Joan Ramon
dc.contributor.author
Guillot, G.
dc.contributor.author
Bremond, G.
dc.contributor.author
Ulrici, W.
dc.date.issued
2012-05-03T09:56:38Z
dc.date.issued
2012-05-03T09:56:38Z
dc.date.issued
1995-08-15
dc.identifier
https://hdl.handle.net/2445/24822
dc.description.abstract
Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360097
dc.relation
Journal of Applied Physics, 1995, vol. 78, núm. 4, p. 2441-2446
dc.relation
http://dx.doi.org/10.1063/1.360097
dc.rights
(c) American Institute of Physics, 1995
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Estructura electrònica
dc.subject
Propietats òptiques
dc.subject
Electronic structure
dc.subject
Optical properties
dc.title
Electron capture and emission by the Ti acceptor level in GaP
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
