Electron capture and emission by the Ti acceptor level in GaP

Fecha de publicación

2012-05-03T09:56:38Z

2012-05-03T09:56:38Z

1995-08-15

Resumen

Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.

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Artículo


Versión publicada

Lengua

Inglés

Publicado por

American Institute of Physics

Documentos relacionados

Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360097

Journal of Applied Physics, 1995, vol. 78, núm. 4, p. 2441-2446

http://dx.doi.org/10.1063/1.360097

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Derechos

(c) American Institute of Physics, 1995

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