2012-05-03T09:56:38Z
2012-05-03T09:56:38Z
1995-08-15
Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.
Article
Published version
English
Estructura electrònica; Propietats òptiques; Electronic structure; Optical properties
American Institute of Physics
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360097
Journal of Applied Physics, 1995, vol. 78, núm. 4, p. 2441-2446
http://dx.doi.org/10.1063/1.360097
(c) American Institute of Physics, 1995