Distribution of recombination currents in the space charge of heterostructure bipolar devices

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Pallares, J
dc.contributor.author	Marsal, L F
dc.contributor.author	Correig, X
dc.contributor.author	Calderer Cardona, Josep
dc.contributor.author	Alcubilla González, Ramón
dc.date	1998-01
dc.identifier.citation	Pallares, J. [et al.]. Distribution of recombination currents in the space charge of heterostructure bipolar devices. "IEEE transactions on electron devices", Gener 1998, vol. 45, núm. 1, p. 54-61.
dc.identifier.citation	0018-9383
dc.identifier.citation	10.1109/16.658811
dc.identifier.uri	http://hdl.handle.net/2117/130751
dc.language.iso	eng
dc.relation	https://ieeexplore.ieee.org/document/658811
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject	Amorphous semiconductors
dc.subject	Electron-hole recombination
dc.subject	Space-charge-limited conduction
dc.subject	Heterojunction bipolar transistors
dc.subject	Semiconductor device models
dc.subject	Electron field emission
dc.subject	Semiconductors amorfs
dc.title	Distribution of recombination currents in the space charge of heterostructure bipolar devices
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current.
dc.description.abstract	Peer Reviewed

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