Título: | Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy |
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Autor/a: | Porti i Pujal, Marc; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier; Olbrich, A.; Ebersberger, B.; American Physical Society |
Abstract: | |
Materia(s): | -Atomic force microscopes -Atomic force microscopy -Electrical properties -Thin films |
Derechos: | open access
Tots els drets reservats. https://rightsstatements.org/vocab/InC/1.0/ |
Tipo de documento: | Article |
Editor: | |
Compartir: | |
Uri: | https://ddd.uab.cat/record/116266 |