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Title:
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Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions
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Author:
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Marsal Amenós, Félix; Pallarés Viña, Miguel Juan; Correig Blanchar, Francesc Xavier; Domínguez Pumar, Manuel; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Alcubilla González, Ramón
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. SPPT - Superfícies, Productes i Processos Tèxtils; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
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Abstract:
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Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier transport mechanisms are believed to be at the origin of the forward current. At low bias voltage, the current is due to recombination in the amorphous side of the space charge region, while at higher voltages, the current becomes space charge limited. At reverse bias, the current can be explained by tunnelling models. The space charge limited currents in these heterojunctions have been used to determine the density of states in the n-type a-Si1 - xCx:H gap. The results show the increase in localized states when approaching the conduction band edge. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
-Amorphous semiconductors
-Amorphous silicon-carbon alloys
-Density of states
-Heterojunction
-Space-charge limited current
-Transport mechanisms
-Semiconductors amorfs |
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Rights:
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Document type:
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Article - Published version
Article |
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