Título:
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Distribution of recombination currents in the space charge of heterostructure bipolar devices
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Autor/a:
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Pallares, J; Marsal, L F; Correig, X; Calderer Cardona, Josep; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Amorphous semiconductors -Electron-hole recombination -Space-charge-limited conduction -Heterojunction bipolar transistors -Semiconductor device models -Electron field emission -Semiconductors amorfs |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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