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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Pallares, J |
dc.contributor.author | Marsal, L F |
dc.contributor.author | Correig, X |
dc.contributor.author | Calderer Cardona, Josep |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 1998-01 |
dc.identifier.citation | Pallares, J. [et al.]. Distribution of recombination currents in the space charge of heterostructure bipolar devices. "IEEE transactions on electron devices", Gener 1998, vol. 45, núm. 1, p. 54-61. |
dc.identifier.citation | 0018-9383 |
dc.identifier.citation | 10.1109/16.658811 |
dc.identifier.uri | http://hdl.handle.net/2117/130751 |
dc.language.iso | eng |
dc.relation | https://ieeexplore.ieee.org/document/658811 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject | Amorphous semiconductors |
dc.subject | Electron-hole recombination |
dc.subject | Space-charge-limited conduction |
dc.subject | Heterojunction bipolar transistors |
dc.subject | Semiconductor device models |
dc.subject | Electron field emission |
dc.subject | Semiconductors amorfs |
dc.title | Distribution of recombination currents in the space charge of heterostructure bipolar devices |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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