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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Marsal, L F |
dc.contributor.author | Pallares, J |
dc.contributor.author | Correig, X |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Bardés Llorensí, Daniel |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 1999-01 |
dc.identifier.citation | Marsal, L. [et al.]. Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations. "Journal of applied physics", Gener 1999, vol. 85, núm. 2, p. 1216-1221. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.369344 |
dc.identifier.uri | http://hdl.handle.net/2117/130750 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics (AIP) |
dc.relation | https://aip.scitation.org/doi/10.1063/1.369344 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject | Solar cells |
dc.subject | Solar cells |
dc.subject | I-V characteristics |
dc.subject | Heterostructures |
dc.subject | Cèl·lules solars |
dc.title | Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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