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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Mahato, Somnath |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Biswas, Debaleen |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Bhunia, Satyaban |
dc.date | 2018-12-07 |
dc.identifier.citation | Mahato, S., Voz, C., Biswas, D., Puigdollers, J. Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode. "Materials Research Express", 7 Desembre 2018, vol. 6, núm. 3, p. 036301-1 / 036301-8 |
dc.identifier.citation | 2053-1591 |
dc.identifier.citation | 10.1088/2053-1591/aaf49f |
dc.identifier.uri | http://hdl.handle.net/2117/125867 |
dc.language.iso | eng |
dc.publisher | Institute of Physics (IOP) |
dc.relation | http://iopscience.iop.org/article/10.1088/2053-1591/aaf49f/pdf |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria dels materials |
dc.subject | Materials science |
dc.subject | Ciència dels materials |
dc.title | Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode |
dc.type | info:eu-repo/semantics/submittedVersion |
dc.type | info:eu-repo/semantics/article |
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