Título:
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Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode
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Autor/a:
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Mahato, Somnath; Voz Sánchez, Cristóbal; Biswas, Debaleen; Puigdollers i González, Joaquim; Bhunia, Satyaban
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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Role of defect states of thermally evaporated molybdenum trioxide (MoO3-x) on electrical conductivity was investigated via low temperature current–voltage and capacitance–voltage measurements. To clarify the charge transport phenomena through MoO3-x, a 15 nm thin layer of MoO3-x film was used as an interface layer between gold and n-type Silicon (n-Si). The formation of an interface dipole between n-Si and MoO3-x exhibits a rectifying behaviour of Au/MoO3-x/n-Si Schottky barrier diode (SBDs). The rectifying nature of the SBDs shown up to 175 K due to proper electron extraction from valence band to conduction band via the defect states; however at =165 K the rectifying nature was not observed due to insulating behaviour of MoO3-x layer. Oxygen deficiency as a formation of defects was determined by x-ray photoelectron spectroscopy (XPS). Consequences of these defects as a function of current conduction across the MoO3-x was also confirmed by low temperature photoluminescence (PL)measurement. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria dels materials -Materials science -Ciència dels materials |
Derechos:
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Tipo de documento:
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Artículo - Versión presentada Artículo |
Editor:
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Institute of Physics (IOP)
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