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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Vetter, Michael |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Cuevas, A |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2001-10 |
dc.identifier.citation | Martin, I., Vetter, M., Orpella, A., Puigdollers, J., Cuevas, A., Alcubilla, R. Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films. "Applied physics letters", Octubre 2001, vol. 79, núm. 14, p. 2199-2201. |
dc.identifier.citation | 0003-6951 |
dc.identifier.citation | 10.1063/1.1404406 |
dc.identifier.uri | http://hdl.handle.net/2117/112825 |
dc.language.iso | eng |
dc.relation | http://aip.scitation.org/doi/abs/10.1063/1.1404406 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Física |
dc.subject | Silicon-carbide thin film |
dc.subject | Amorphous semiconductors |
dc.subject | Thin films |
dc.subject | Wide bandgap semiconductors |
dc.subject | Plasma chemical vapor deposition |
dc.subject | Plasma materials processing |
dc.subject | Capes fines de carbur de silici |
dc.title | Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract | |
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