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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Caccamo, Lorenzo |
dc.contributor.author | Fábrega, Cristian |
dc.contributor.author | Marschewski, Marcel |
dc.contributor.author | Fündling, Sönke |
dc.contributor.author | Gad, Alaaeldin |
dc.contributor.author | Casals Guillén, Olga |
dc.contributor.author | Lilienkamp, Gerhard |
dc.contributor.author | Hofft, Oliver |
dc.contributor.author | Prades García, Juan Daniel |
dc.contributor.author | Daum, Winfried |
dc.contributor.author | Waag, Andreas |
dc.date | 2017-03-09T15:44:08Z |
dc.date | 2017-12-29T23:01:21Z |
dc.date | 2016-12-29 |
dc.date | 2017-03-09T15:44:08Z |
dc.identifier.citation | 1932-7447 |
dc.identifier.citation | 669251 |
dc.identifier.uri | http://hdl.handle.net/2445/108189 |
dc.format | 7 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Chemical Society |
dc.relation | Versió postprint del document publicat a: https://doi.org/10.1021/acs.jpcc.6b09256 |
dc.relation | Journal of Physical Chemistry C, 2016, vol. 120, num. 51, p. 28917-28923 |
dc.relation | https://doi.org/10.1021/acs.jpcc.6b09256 |
dc.rights | (c) American Chemical Society , 2016 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Detectors de gasos |
dc.subject | Semiconductors |
dc.subject | Transferència de càrrega |
dc.subject | Gas detectors |
dc.subject | Semiconductors |
dc.subject | Charge transfer |
dc.title | Charge Transfer Characteristics of n-type In0.1Ga0.9N Photoanode across Semiconductor-Liquid Interface |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/acceptedVersion |
dc.description.abstract |