Improvement of driver to gate coupling circuits for SiC MOSFETS

Home | About RECERCAT | Contact

Català | Castellano

All of RECERCAT

By Communities &
Collections By Defense Date By Authors By Titles By Subject

This Collection

By Defense Date By Authors By Titles By Subject

Statistics

View Statistics All RECERCAT

My RECERCAT

Other repositories directory

RECERCAT Home > Universitat Politècnica de Catalunya > Documents de recerca > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2117/26763

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group
dc.contributor.author	Balcells Sendra, Josep
dc.contributor.author	Mon González, Juan
dc.contributor.author	Lamich Arocas, Manuel
dc.contributor.author	Laguna, Alberto
dc.date	2014
dc.identifier.citation	Balcells, J. [et al.]. Improvement of driver to gate coupling circuits for SiC MOSFETS. A: IEEE International Symposium on Industrial Electronics. "IEEE 23rd International Symposium on Industrial Electronics (ISIE 2014): 1-4 June 2014: Grand Cevahir Hotel and Convention Center, Istanbul, Turkey: proceedings". Istanbul: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 521-525.
dc.identifier.citation	978-1-4799-2400-4
dc.identifier.citation	10.1109/ISIE.2014.6864667
dc.identifier.uri	http://hdl.handle.net/2117/26763
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Electric current converters
dc.subject	Electric currents
dc.subject	Driver circuits
dc.subject	SiC MOSFET
dc.subject	Power Losses
dc.subject	Conducted EMI
dc.subject	DC-DC converters
dc.subject	Convertidors de corrent elèctric
dc.subject	Circuits elèctrics
dc.title	Improvement of driver to gate coupling circuits for SiC MOSFETS
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias VGS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOSFET gate.
dc.description.abstract	Peer Reviewed

Show simple item record

All of RECERCAT

This Collection

Statistics

My RECERCAT

Related documents

Other documents of the same author