Improvement of driver to gate coupling circuits for SiC MOSFETS

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Title:	Improvement of driver to gate coupling circuits for SiC MOSFETS
Author:	Balcells Sendra, Josep; Mon González, Juan; Lamich Arocas, Manuel; Laguna, Alberto
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group
Abstract:	This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias VGS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOSFET gate.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica -Electric current converters -Electric currents -Driver circuits -SiC MOSFET -Power Losses -Conducted EMI -DC-DC converters -Convertidors de corrent elèctric -Circuits elèctrics
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Document type:	Article - Published version Conference Object
Published by:	Institute of Electrical and Electronics Engineers (IEEE)
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