Evaluation of trr distorting effects reduction in DCI-NPC multilevel power amplifiers by using SiC diodes and MOSFET technologies

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/19170

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group
dc.contributor.author	Sala Caselles, Vicenç
dc.contributor.author	Resano, Tomas
dc.contributor.author	Romeral Martínez, José Luis
dc.contributor.author	Moreno Eguilaz, Juan Manuel
dc.date	2013
dc.identifier.citation	Sala, V. [et al.]. Evaluation of trr distorting effects reduction in DCI-NPC multilevel power amplifiers by using SiC diodes and MOSFET technologies. A: Audio Engineering Society. "Proceedings of 133nd Audio Engineering Society Convention 2012". San Francisco, California: Curran, 2013.
dc.identifier.citation	9781622766031
dc.identifier.uri	http://hdl.handle.net/2117/19170
dc.language.iso	eng
dc.publisher	Curran
dc.relation	http://cataleg.upc.edu/record=b1373871~S1*cat
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
dc.subject	Power amplifiers
dc.subject	Transducers
dc.subject	Amplifiers
dc.subject	Transducers
dc.subject	Equipment
dc.subject	Amplificadors de potència
dc.subject	Transductors
dc.title	Evaluation of trr distorting effects reduction in DCI-NPC multilevel power amplifiers by using SiC diodes and MOSFET technologies
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	In the last decade, the Power Amplifier applications have used multilevel diode-clamped-inverter or neutral-point-clamped (DCI-NPC) topologies to present very low distortion at high power. In these applications a lot of research has been done in order to reduce the sources of distortion in the DCI-NPC topologies. One of the most important sources of distortion, and less studied, is the reverse recovery time (trr) of the clamp diodes and MOSFET parasitic diodes. Today, with the emergence of Silicon Carbide (SiC) technologies, these sources of distortion are minimized. This paper presents a comparative study and evaluation of the distortion generated by different combinations of diodes and MOSFETs with Si and SiC technologies in a DCI-NPC multilevel Power Amplifier in order to reduce the distortions generated by the non-idealities of the semiconductor devices.

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