Título:
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Evaluation of trr distorting effects reduction in DCI-NPC multilevel power amplifiers by using SiC diodes and MOSFET technologies
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Autor/a:
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Sala Caselles, Vicenç; Resano, Tomas; Romeral Martínez, José Luis; Moreno Eguilaz, Juan Manuel
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group |
Abstract:
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In the last decade, the Power Amplifier applications have used multilevel diode-clamped-inverter or neutral-point-clamped (DCI-NPC) topologies to present very low distortion at high power. In these applications a lot of research has been done in order to reduce the sources of distortion in the DCI-NPC topologies. One of the most important sources of distortion, and less studied, is the reverse recovery time (trr) of the clamp diodes and MOSFET parasitic diodes. Today, with the emergence of Silicon Carbide (SiC) technologies, these sources of distortion are minimized. This paper presents a comparative study and evaluation of the distortion generated by different combinations of diodes and MOSFETs with Si and SiC technologies in a DCI-NPC multilevel Power Amplifier in order to reduce the distortions generated by the non-idealities of the semiconductor devices. |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència -Power amplifiers -Transducers -Amplifiers -Transducers -Equipment -Amplificadors de potència -Transductors |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
Editor:
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Curran
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