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Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
Ibáñez i Insa, Jordi; Oliva Vidal, Robert; De la Mare, M.; Schmidbauer, M.; Hernández Márquez, Sergi; Pellegrino, Paolo; Scurr, D. J.; Cuscó i Cornet, Ramon; Artús i Surroca, Lluís; Shafi, M.; Mari, R. H.; Henini, M.; Zhuang, Q.; Godenir, A.; Krier, A.
Universitat de Barcelona
We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.
2012-07-18
Propietats òptiques
Pel·lícules fines
Difracció de raigs X
Semiconductors
Cristal·lografia
Optical properties
Thin films
X-rays diffraction
Semiconductors
Crystallography
(c) American Institute of Physics , 2010
Article
info:eu-repo/semantics/publishedVersion
American Institute of Physics
         

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