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Título:
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Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach
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Autor/a:
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Bulashenko, Oleg; Gaubert, P.; Varani, L.; Vaissiere, J. C.; Nougier, J. P.
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Otros autores:
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Universitat de Barcelona |
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Abstract:
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A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained |
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Materia(s):
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-Díodes
-Soroll
-Camps elèctrics
-Semiconductors
-Mètode de Montecarlo
-Electrònica de l'estat sòlid
-Microelectrònica
-Diodes
-Noise
-Electric fields
-Semiconductors
-Monte Carlo method
-Solid state electronics
-Microelectronics |
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Derechos:
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(c) American Institute of Physics, 2000
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Tipo de documento:
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Artículo
Artículo - Versión publicada |
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Editor:
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American Institute of Physics
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Compartir:
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