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Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A.(Viacheslav Aleksandrovich)
Universitat de Barcelona
We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration
Semiconductors
Soroll electrònic
Díodes
Transistors
Camps elèctrics
Microelectrònica
Semiconductors
Electronic noise
Diodes
Transistors
Electric fields
Microelectronics
(c) American Institute of Physics, 1998
Artículo
American Institute of Physics
         

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