dc.contributor.author
Roura Grabulosa, Pere
dc.contributor.author
Bosch Estrada, José
dc.contributor.author
Morante i Lleonart, Joan Ramon
dc.date.issued
2009-10-28T09:30:21Z
dc.date.issued
2009-10-28T09:30:21Z
dc.identifier
https://hdl.handle.net/2445/9848
dc.description.abstract
Optical-absorption measurements have been carried out on tensile and compressive
In
x
Ga
1
−
x
As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband
σ
HH
/
σ
LH
is the key to knowing the origin of the microscopic inhomogeneities. So,
σ
HH
/
σ
LH
<1 indicates the existence of composition inhomogeneities whereas
σ
HH
/
σ
LH
=2.8 reveals an inhomogeneous strain field.
dc.format
application/pdf
dc.publisher
The American Physical Society
dc.relation
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453
dc.relation
Physical Review B, 1992, vol. 46, núm. 16, p. 10453-10456.
dc.relation
http://dx.doi.org/10.1103/PhysRevB.46.10453
dc.rights
(c) The American Physical Society, 1992
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Electrònica de l'estat sòlid
dc.subject
Propietats òptiques
dc.subject
Semiconductors
dc.subject
Microscòpia electrònica de transmissió
dc.subject
Solid state electronics
dc.subject
Optical properties
dc.subject
Semiconductors
dc.subject
Transmission electron microscopy
dc.subject
Photoluminescence
dc.title
Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
