Universitat de Barcelona
2009-10-28T09:30:21Z
2009-10-28T09:30:21Z
1992
Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field.
Article
Published version
English
Electrònica de l'estat sòlid; Propietats òptiques; Luminescència; Semiconductors; Microscòpia electrònica de transmissió; Solid state electronics; Optical properties; Semiconductors; Transmission electron microscopy; Photoluminescence
The American Physical Society
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453
Physical Review B, 1992, vol. 46, núm. 16, p. 10453-10456.
http://dx.doi.org/10.1103/PhysRevB.46.10453
(c) The American Physical Society, 1992
